Design of non-uniform 100-V super-junction trench power MOSFET with low on-resistance

Design of 100-V Super-Junction Trench Power MOSFET with Low On-Resistance

© 2012 ETRI Journal, Volume 34, Number 1, February 2012 Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance an...

Design of edge termination on non-uniform 100-V super-junction trench power MOSFET

A design methodology for the edge termination is proposed to achieve the same breakdown voltage of the non-uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) cell structure. A simple analytical solution for the effect of charge imbalance on the termination region is suggested, and it is satisfied with the simulation of potential distribution. The dopi...

Low On-resistance Trench Lateral Power MOSFET Using 0.6 μm Smart Power Technology

In response to the requests of recent years for electronic devices that are smaller, lighter, thinner and consume less power, Fuji Electric has concentrated on the field of power supply ICs and has been developing smart power technology. To increase the packing density and reduce on-resistance of the switching devices integrated into a power IC, Fuji Electric has been producing and has verified...

Low Voltage Super Junction MOSFET Simulation and Experimentation

The application of Super Junction concepts to a low voltage power MOSFET is investigated. The body junction is modified with the addition of a high energy implant, resulting in an increased breakdown voltage. Simulations are used to quantify the relationship between dose and breakdown voltage, resulting in a predicted 35% Rds(on) reduction. This is confirmed through experiment, and a 19% reduct...

Analysis of the role of the parasitic BJT of Super-Junction power MOSFET under TLP stress